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    ISO 04825-1-2023.docx

    • 资源ID:1742234       资源大小:166.40KB        全文页数:22页
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    ISO 04825-1-2023.docx

    INTERNATIONA1.STANDARDISO4825-1editionFirst202301Fineceramics(advancedceramics,advancedtechnica1.ceramics)一Testmethodfortherma1.propertymeasurementsofmeta1.izedceramicsubstrates一FyNqgtionoftherma1.resistanceforuseinpowermodu1.esCeramiquestechniquesMethoded'essaipourIeSmesuresdesproprietyChermiquesdessubstratsCeramiquesmeta1.1.isesPartie1:Eva1.uationdeIaresistancethenniquepouruti1.isationdansIesmodu1.esd1.a1.imentationReferencenumberISO48251.2023(E)©ISO2023COPYRIGHTPROTECTEDDOCUMENT©ISO2023IUirhM*hedbdi1.iUedotherwiseupdhi.or啪UIBndttaeDmk<nroni(ncm11ni10tf1.*Mqn1.C6pW11opypMRHt1.onmaytheinternetoranintranet,withoutpriorwrittenpermission.PermissioncanberequestedfromeitherISOattheaddressbe1.oworISO'smemberbodyinthecountryoftherequester.f),WV>fifiHipB1.andonnet8CH-1214Vernier,GenevaPhone:M1.22749O1.11觥ftte:丽丽BQrgPub1.ishedinSwitzer1.andContentsForewordI>troductionNormativereferencesTermsanddefinitions*««««*«*«三*»*»*«*«*«*«Apparatus2Procedure6.2Testenvironments76.2Testenvironments7Ca1.cu1.ation8Testreport8Ca1.cu1.ation8Testreport8Annex A (informative)Examp1.eofset-upapparatus9Annex B (informative)Inter1.aboratoryeva1.uationoftherma1.resistancemeasurements10Bib1.iography一.一.12ForewordISO(theInternationa1.OrganizationforStandardization)isawor1.dwidefederationofnationa1.standardsthtiugh(ISOtchn0ibMriiRj)tvcekuPWf1.PbrjGgbOdy1.nrf1.rOaiiaHI6tanddki4oTOWhidbtarrte<nmitteehasbeenestab1.ishedhastherighttoberepresentedonthatcommittee.Internationa1.organizations,governmenta1.andnon-governmenta1.,in1.iaisonwithISO.a1.sotakepartinthework.ISOco1.1.aboratesc1.ose1.ywiththee1.ectrotechnica1.standardization.Internationa1.E1.ectrotechnica1.Commission(IEC)ona1.1.mattersofTheproceduresusedtodeve1.opthisdocumentandthoseintendedforitsfurthermaintenanceare蜩则搬OfISO1.EC(三腺牺IHQn°trJWM蝴er%COrdanCetheeditoria1.ru1.esoftheISO/IECDirectives.Part2(seewww.iso.org/direc1.ives).RMonrights.dE小脚蝴橱卿SnSi搬神用R时槐制眈doc瞰棉翩春刚hsubjectofanypatentrightsidentifiedduringthedeve1.opmen13th。do0向的twi1.1.beintheIntroductionand/orontheISO1.istofpatentdec1.arationsreceived(seewww.iso.org/patents).Anytradeusedinthisconstitutenameendorsement,documentisinformationgivenfortheconvenienceofusersanddoesnotForanexp1.anationofthevo1.untarynatureofstandards,themeaningofISOspecifictermsand族aR涸枭取OrRanfWMWass忠jSW窿inwJ憎s成IaiQnBar池然Mdead戚tes做vv¼w.iso.orgiso/forewod.htmI.ThisdocumentwaspreparedbyTechnica1.CommitteeISO/TC206,Fineceramics.A1.istofa1.1.partsintheISO4825seriescanhefoundontheISOwebsite.AWRftfts1.ft111.iesthiscahRUftf1.i1.WvwSfHeH4HH41.5fnationa1.standardsbody.AIntroductionuse.Againstconversiontechno1.ogiesmodu1.escrucia1.semiconductorgeneration,transmission,high-efficencySemiconductorsincreasingexpectationsOthertheirsuchprospectsofnextgenerationconservation,semiconductorstemperaturescharacteristicsanticipatedtomateria1.s250forhigh-temperatureOperationtechno1.ogiesnearhecomingjunctionmosthigh-outputcomponentmateria1.s.insu1.atingpowersemiconductordevicese1.ectrica1.insu1.atorisoutputandinsu1.atingSubstratesbetweenConstituenthighmateria1.srconductivity.conductoraddition,tominimizeinterfacia1.Techniquesceramicsubstrates;however,therma1.areconductivityoftheindividua1.materia1.scomprisinghighheat-dissipatingefficiency.differentia1.meta1.1.izedceramicsubstrate.Manufacturersmeasuree1.ements,resistanceOthersystemthatInternationa1.OrganizationforStandardization(ISO)ofPa1.Cn1.a1.tentiontothefactthatitisc1.aimedreasonab1.eandnon-discriminatoryassuredandISOconditionshesheisapp1.icantsthroughOUHiCenCeSWOrid.underAttentionrightsdrawnthanpossibi1.itypatentsomedatabase.e1.emcntsnotthisdocumcntresponsib1.eIhcidentifyingE1.ectrica1.energyispredictedtobecomeanincreasing1.ymajormoda1.ityofenergyusageinthefuture,vandpowerthisbackdrop,powerp1.ayathatuscro1.edevicesprovidestorageandconversionandcontro1.ofe1.ectricpowerarcbecominganextreme1.yimportanttechno1.ogy.Whi1.esi1.iconhas1.ongbeenusedastheprimarymateria1.forpowersemiconductordevices,widebandgaparedrawingusingSiCrGaNandformateria1.sasenergypowerhigheroutputandhigh-speedoperation.Powermodu1.esusingnext-generationpowersemiconductorsofthistypearea1.soanticipatedtoprovidehigheroutputandhigherenergydensity,and1.ikewisetocapita1.izeontheofthesereach),thusheat-dissipating(infuture,importantthaneverbefore.Inimportantpowermodu1.es,anAssubstrateservingasanincreasepoweroneoftheenergydensity,theamountanddensityofheatdissipatedbythesedevicesarea1.soincreasing,creatingademandforhighertherma1.conductivityinsubstrate.Forthisreason,ceramicsaregenera1.1.yusedastherma1.resistancebecauseoftheirtherma1.meta1.1.icIncircuit1.ayersarea1.sojoinedtoceramicsubstratesathightemperature.Heat-dissipatin

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